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description the AUIRF7799L2TR combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet? packaging to achieve the lowest on-state resistance in a package that has the footprint of a dpak (to-252aa) and only 0.7 mm profile. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra -red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. t he directfet ? package allows dual sided cooling to maximize thermal transfer in automotive power systems. this hexfet power mosfet is designed for applications where efficiency and power density are essential. the advanced directfet? packaging platform coupled with the latest silicon technology allows the AUIRF7799L2TR to offer substantial system level saving s and perfor- mance improvement specifically in motor drive, high frequency dc-dc and other heavy load applications on ice, hev and ev platfo rms. this mosfet utilizes the latest processing techniques to achieve low on-resistance and low qg per silicon area. additional features of this mosfet are 175c operating junction temperature and high repetitive peak current capability. these features combine to make this mosfe t a highly efficient, robust and reliable device for high current automotive applications. www.irf.com 1 12/13/11 AUIRF7799L2TR AUIRF7799L2TR1 applicable directfet ? outline and substrate outline automotive directfet ? power mosfet automotive grade directfet ? isometric sb sc m2 m4 l4 l6 l8 v (br)dss 250v r ds(on) typ. 32m max. 38m i d (silicon limited) 35a q g 110nc d d s s s s s s s s g ? advanced process technology ? optimized for automotive motor drive, dc-dc and other heavy load applications ? exceptionally small footprint and low profile ? high power density ? low parasitic parameters ? dual sided cooling ? 175c operating temperature ? repetitive avalanche capability for robustness and reliability ? lead free, rohs compliant and halogen free ? automotive qualified * absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/
parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t c = 100c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ??? 35 r 12.5 ??? r 20 ??? c/w r ??? 1.2 r 0. w/c 0.83 see fig.18a, 18b, 16, 17 270 c -55 to + 175 w 63 4.3 v a 375 325 max. 25 6.6 140 30 250 35 125

2 www.irf.com surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) notes through are on page 10 static characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 250 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c r ds(on) static drain-to-source on-resistance ??? 32 38 m v gs(th) gate threshold voltage 3.0 4.0 5.0 v v gs(th) / t j gate threshold voltage coefficient ??? -13 ??? mv/c gfs forward transconductance 54 ??? ??? s i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 1 1ma i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 dynamic characteristics @ t j = 25c (unless otherwise stated) q g total gate charge ??? 110 165 q gs1 pre-vth gate-to-source charge ??? 26 ??? q gs2 post-vth gate-to-source charge ??? 5.7 ??? q gd gate-to-drain charge ??? 39 q godr gate charge overdrive ??? 39 ??? see fig. 9 q sw switch charge (q gs2 + q gd ) ??? 45 ??? q oss output charge ??? 33 ??? nc r g gate resistance ??? 0.73 ??? t d(on) turn-on delay time ??? 36.3 ??? t r rise time ??? 33.5 ??? t d(off) turn-off delay time ??? 73.9 ??? t f fall time ??? 26.6 ??? c iss input capacitance ??? 6714 ??? c oss output capacitance ??? 606 ??? c rss reverse transfer capacitance ??? 157 ??? c oss output capacitance ??? 5063 ??? c oss output capacitance ??? 217 ??? diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 132 198 ns q rr reverse recovery charge ??? 1412 2118 nc ??? ??? 140 a na ??? ??? 35 nc ns pf mosfet symbol r g =6.2 v ds = 25v conditions v gs = 0v, v ds = 80v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz v ds = 16v, v gs = 0v v dd = 125v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 21a v ds = v gs , i d = 250 a v ds = 250v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 2ma v gs = 10v, i d = 21a t j = 25c, i f = 21a, v dd = 50v di/dt = 100a/ s t j = 25c, i s = 21a, v gs = 0v showing the integral reverse p-n junction diode. i d = 21a v ds = 250v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 50v, i d = 21a v ds = 125v

www.irf.com 3 qualification information ? large-can msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model n/a (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 800v) ??? (per aec-q101-002) human body model class h2 (+/- 4000v) ??? (per aec-q101-001) ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 175c 5.0v 4 8 12 16 20 v gs, gate -to -source voltage (v) 20 40 60 80 100 120 140 160 180 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 21a t j = 25c t j = 125c 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 175c tj = 25c tj = -40c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 21a v gs = 10v 0 20 40 60 80 100 i d , drain current (a) 25 30 35 40 45 50 55 60 t y p i c a l r d s ( o n ) ( m w ) t j = 25c vgs = 7.0v vgs = 8.0v vgs = 10v vgs = 15v

www.irf.com 5 fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a id = 1.0ma id = 1.0a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 175c tj = 25c tj = -40c v gs = 0v 0 20 40 60 80 100 120 i d ,drain-to-source current (a) 0 40 80 120 160 200 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 50v 20 s pulse width 1 10 100 1000 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v vds= 50v i d = 21a 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 i d , d r a i n c u r r e n t ( a )

6 www.irf.com fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.33a 2.53a bottom 21a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri ri (c/w) i (sec) 0.38829 0.000787 0.8117 0.006586 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse)

www.irf.com 7 fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 17: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 21a

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please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations note: for the most current drawing please refer to ir website at http://www.irf.com/package fig 21. for hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations automotive directfet? part marking note: for the most current drawing please refer to ir website at http://www.irf.com/package code a b c d e f g h j k l m r p 0.017 0.029 0.003 0.007 0.057 0.104 0.236 0.048 0.026 0.024 max 0.360 0.280 0.38 0.68 0.02 0.09 1.35 2.55 5.90 1.18 0.55 0.58 min 9.05 6.85 0.42 0.74 0.08 0.17 1.45 2.65 6.00 1.22 0.65 0.62 max 9.15 7.10 0.015 0.027 0.003 0.001 0.100 0.053 0.232 0.046 0.023 0.022 min 0.270 0.356 metric imperial dimensions 0.98 1.02 0.73 0.77 0.040 0.039 0.030 0.029 l1 0.215 5.35 5.45 0.211 "au" = gate and automotive marking part number logo batch number date code line above the last character of the date code indicates "lead-free"

10 www.irf.com automotive directfet? tape & reel dimension (showing component orienta- tion). note: for the most current drawing please refer to ir website at http://www .irf.com/package click on this section to link to the appropriate technical paper. click on this section to link to the directfet ? website.
surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part.
repetitive rating; pulse width limited by max. junction temperature. #!$ starting t j = 25c, l = 1.42mh, r g = 25 , i as = 21a. pulse width 400 s; duty cycle 2%.
used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c. reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. (ordered as AUIRF7799L2TR). for 1000 parts on 7" reel, order AUIRF7799L2TR1 max n.c n.c 0.520 n.c 3.940 0.880 0.720 0.760 imperial min 330.00 20.20 12.80 1.50 99.00 n.c 16.40 15.90 standard option (qty 4000) code a b c d e f g h max n.c n.c 13.20 n.c 100.00 22.40 18.40 19.40 min 12.992 0.795 0.504 0.059 3.900 n.c 0.650 0.630 metric min 7.000 0.795 0.331 0.059 2.460 n.c n.c 0.630 tr1 option (qty 1000) max n.c n.c 13.50 2.50 n.c n.c n.c n.c min 177.80 20.20 12.98 1.50 62.48 n.c n.c 16.00 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 4.69 0.154 0.623 0.291 0.283 0.390 0.059 0.059 max 12.10 4.10 16.30 7.60 7.40 10.10 n.c 1.60 min 11.90 3.90 15.90 7.40 7.20 9.90 1.50 1.50 metric dimensions max 0.476 0.161 0.642 0.299 0.291 0.398 n.c 0.063

www.irf.com 11 ordering information complete part number form quantity tape and reel 4000 AUIRF7799L2TR tape and reel 1000 AUIRF7799L2TR1 directfet2 large can auirf7799l2 base part number package type standard pack

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its prod- ucts and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this informa- tion with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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